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Same model may have multiple batches, images only for reference.
IRFH5220TRPBF Real Image
Same model may have multiple batches, images only for reference.

IRFH5220TRPBF

Part No IRFH5220TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 3.8A PQFN
Datasheet
IRFH5220TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 3.8A (Ta), 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 100μA
Max Gate Charge 30nC @ 10V
Max Input Capacitance 1380pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.6W (Ta), 8.3W (Tc)
Maximum Rds On at Id,Vgs 99.9 mOhm @ 5.8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PQFN (5x6)
Dimension 8-VQFN Exposed Pad
Win Source Part Number 1046877-IRFH5220TRPBF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRFH5220TRPBF CAD Model

Description

The IRFH5220TRPBF is an N-channel MOSFET that is designed for use in various applications and is manufactured by Infineon Technologies.

  • Input Type: Non-inverting
  • Drain-Source Breakdown Voltage: 200V
  • Maximum Power Dissipation: 3.6W (Ta) and 8.3W (Tc)
  • Maximum Continuous Drain Current: 3.8A (Ta) and 20A (Tc) @ 25°C
  • Maximum Gate Charge: 30nC @ 10V
  • Maximum Input Capacitance: 1380pF @ 50V
  • Standard Package: PQFN (5x6)
  • Status: Obsolete (EOL)

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.7579 $61.5265
85+ $1.4426 $122.6210
125+ $1.3976 $174.7000
175+ $1.3525 $236.6875
225+ $1.3075 $294.1875
300+ $1.1723 $351.6900
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 32,000 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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