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Same model may have multiple batches, images only for reference.
IRFH5250DTRPBF Real Image
Same model may have multiple batches, images only for reference.

IRFH5250DTRPBF

Part No IRFH5250DTRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 40A 8VQFN
Datasheet
IRFH5250DTRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 40A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.35V @ 150μA
Max Gate Charge 83nC @ 10V
Max Input Capacitance 6115pF @ 13V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.6W (Ta), 156W (Tc)
Maximum Rds On at Id,Vgs 1.4 mOhm @ 50A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PQFN (5x6) Single Die
Dimension 8-PowerVDFN
Win Source Part Number 017596-IRFH5250DTRPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFH5250DTRPBF CAD Model

Description

The Infineon Technologies IRFH5250DTRPBF is a N-Channel MOSFET transistor that is designed for high voltage, high speed switching applications.

  • Drain-Source Breakdown Voltage: 25V
  • Continuous Drain Current: 40A (Ta), 100A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 2.35V @ 150μA
  • Maximum Gate Charge: 83nC @ 10V
  • Package: PQFN (5x6) Single Die
  • Mounting: Surface
  • Power Dissipation: 3.6W (Ta), 156W (Tc)
  • Temperature Range: -55°C to 150°C (TJ)
  • Category: Discrete Semiconductor Products
  • Status: Active

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Quantity Unit Price Ext. Price
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24+ $4.2451 $101.8824
37+ $4.1124 $152.1588
51+ $3.9797 $202.9647
65+ $3.8471 $250.0615
87+ $3.4491 $300.0717
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