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Same model may have multiple batches, images only for reference.
IRFHS8342TR2PBF Real Image
Same model may have multiple batches, images only for reference.

IRFHS8342TR2PBF

Part No IRFHS8342TR2PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 8.8A PQFN
Datasheet
IRFHS8342TR2PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Cut Reel
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 8.8A (Ta), 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.35V @ 25μA
Max Gate Charge 8.7nC @ 10V
Max Input Capacitance 600pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.1W (Ta)
Maximum Rds On at Id,Vgs 16 mOhm @ 8.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-PQFN (2x2)
Dimension 6-PowerVDFN
Win Source Part Number 1046919-IRFHS8342TR2PBF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRFHS8342TR2PBF CAD Model

Description

The Infineon Technologies MOSFET is a high-performance N-channel power transistor that can handle a maximum power dissipation of 2.1W (Ta).

  • Power Dissipation: 2.1W (Ta)
  • Package: 6-PQFN (2x2)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 8.8A (Ta), 19A (Tc)
  • Gate-Source Threshold Voltage: 2.35V @ 25μA
  • Application: Discrete Semiconductor Products
  • Rds On: 16 mOhm @ 8.5A, 10V
  • Ideal for: High Power Dissipation and Low Rds On

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