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IRFHS9301TR2PBF

Part No IRFHS9301TR2PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 6A PQFN
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Cut Reel
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 6A (Ta), 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.4V @ 25μA
Max Gate Charge 13nC @ 10V
Max Input Capacitance 580pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.1W (Ta)
Maximum Rds On at Id,Vgs 37 mOhm @ 7.8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-PQFN (2x2)
Dimension 6-PowerVDFN
Win Source Part Number 1046920-IRFHS9301TR2PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFHS9301TR2PBF CAD Model

Description

The Infineon Technologies IRFHS9301TR2PBF is a P-channel MOSFET with a drain-source breakdown voltage of 30V.

  • Maximum Power Dissipation: 2.1W (Ta)
  • Continuous Drain Current: 6A (Ta), 13A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 2.4V @ 25μA
  • Maximum Gate Charge: 13nC @ 10V
  • Maximum Input Capacitance: 580pF @ 25V
  • Maximum Rds On: 37 mOhm @ 7.8A, 10V
  • Package: 6-PQFN (2x2)
  • Dimension: 6-PowerVDFN
  • Drive Voltage: 4.5V, 10V
  • Temperature Range: -55°C to 150°C (TJ)
  • Lifecycle Status: Obsolete (EOL)
  • Popularity: Medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
180+ $0.2829 $50.9220
380+ $0.2650 $100.7000
590+ $0.2561 $151.0990
840+ $0.2382 $200.0880
1,095+ $0.2292 $250.9740
1,365+ $0.2203 $300.7095
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 18,080 pieces
MOQ: 180 pcs
Order Increment : 1 pcs
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