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IRFI4227PBF

Part No IRFI4227PBF
Manufacturer Infineon Technologies
Catalog FETs - Single
Description PDP SWITCH | MOSFET N-CH 200V 26A TO-220FP
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 200V
Id - Continuous Drain Current 26A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 25mOhm at 17A, 10V
Gate Source Voltage(th) (Maximum) at Id 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 110nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 4600pF at 25V
Power Dissipation (Maximum) 46W
Temperature Range - Operating -40°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-220AB Full-Pak
Manufacturer Package TO-220-3 Full Pack
Manufacturer Pack Quantity 2,000
MSL Level 1 (Unlimited)
Win Source Part Number 1187636-IRFI4227PBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFI4227PBF CAD Model

Description

The 1187636-IRFI4227PBF from Infineon Technologies is an N-channel MOSFET transistor designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 26A
  • Power Dissipation: 46W (Maximum)
  • Gate-Source Voltage: ±30V
  • Supply and Demand Status: Limited
  • Package: 2,000 units

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $27.8572 $55.7144
5+ $22.8572 $114.2860
7+ $22.1429 $155.0003
10+ $21.4286 $214.2860
13+ $20.7143 $269.2859
17+ $18.5715 $315.7155
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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Shipping Information

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