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Same model may have multiple batches, images only for reference.
IRFIB41N15DPBF Real Image
Same model may have multiple batches, images only for reference.

IRFIB41N15DPBF

Part No IRFIB41N15DPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 41A TO220FP
Datasheet
IRFIB41N15DPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 41A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5.5V @ 250μA
Max Gate Charge 110nC @ 10V
Max Input Capacitance 2520pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 48W (Tc)
Maximum Rds On at Id,Vgs 45 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB Full-Pak
Dimension TO-220-3 Full Pack
Win Source Part Number 069489-IRFIB41N15DPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFIB41N15DPBF CAD Model

Description

The Infineon Technologies IRFIB41N15DPBF is a N-Channel MOSFET transistor that is designed for high voltage, high speed switching applications.

  • Drain-Source Breakdown Voltage: 150V
  • Continuous Drain Current: 41A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 5.5V @ 250μA
  • Maximum Gate Charge: 110nC @ 10V
  • Package: TO-220AB Full-Pak
  • Power Dissipation: 48W (Tc)
  • Temperature Range: -55°C to 175°C (TJ)

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Quantity Unit Price Ext. Price
4+ $15.9944 $63.9776
9+ $13.1243 $118.1187
14+ $12.7142 $177.9988
19+ $12.3042 $233.7798
25+ $11.8942 $297.3550
33+ $10.6630 $351.8790
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