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IRFM350

Part No IRFM350
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Continuous Drain Current (ID) 14 A
Drain to Source Breakdown Voltage 400 V
Drain to Source Resistance 315 mΩ
Drain to Source Voltage (Vdss) 400 V
Gate to Source Voltage (Vgs) 20 V
Lead Free Contains Lead
Maximum Operating Temperature 150 °C
Min Operating Temperature -55 °C
Mount Through Hole
Number of Elements 1
Number of Pins 3
On-State Resistance 300 mΩ
Power Dissipation 150 W
Radiation Hardening No
RoHS Non-Compliant
Schedule B 8541290080
Win Source Part Number 1065565-IRFM350
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Infineon Technologies
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian IRFM350 CAD Model

Description

The Infineon Technologies IRFM350 is a single element MOSFET transistor with a drain to source voltage of 400 V and a power dissipation of 150 W.

  • Pins: 3
  • Category: Transistors - FETs, MOSFETs - RF
  • Alternative Parts: IRFP350PBF, IRFP340PBF, IRF350, JANTX2N6768, STP17NK40Z, and IRF740PBF
  • Supply and Demand Status: Shortage
  • Maximum Operating Temperature: 150 °C
  • Contains Lead: Yes
  • Mounting: Through hole
  • RoHS: Non-compliant
  • Continuous Drain Current: 14 A
  • Drain to Source Breakdown Voltage: 400 V
  • Gate to Source Voltage: 20 V
  • On-State Resistance: 300 mΩ
  • Drain to Source Resistance: 315 mΩ

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Pricing & Ordering

Quantity Unit Price Ext. Price
8+ $7.9325 $63.4600
18+ $6.5084 $117.1512
28+ $6.3051 $176.5428
38+ $6.1019 $231.8722
49+ $5.8986 $289.0314
66+ $5.2887 $349.0542
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,000 pieces
MOQ: 8 pcs
Order Increment : 1 pcs
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