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Same model may have multiple batches, images only for reference.
IRFN054
Same model may have multiple batches, images only for reference.

IRFN054

Part No IRFN054
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Continuous Drain Current (ID) 40 A
Current Rating 55 A
Drain to Source Breakdown Voltage 60 V
Drain to Source Resistance 20 mΩ
Drain to Source Voltage (Vdss) 60 V
Gate to Source Voltage (Vgs) 20 V
Lead Free Contains Lead
Maximum Operating Temperature 150 °C
Min Operating Temperature -55 °C
Mount Surface Mount
Number of Pins 3
Packaging Bulk
Power Dissipation 150 W
Radiation Hardening No
RoHS Compliant
Voltage Rating (DC) 60 V
Win Source Part Number 1033014-IRFN054
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Infineon Technologies
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian IRFN054 CAD Model

Description

The IRFN054 is a single IGBT transistor with a voltage rating of 60V and a current rating of 55A.

  • Type: single IGBT transistor
  • Voltage Rating: 60V
  • Current Rating: 55A
  • Mounting Type: surface mount
  • Power Dissipation: 150W (Max)
  • Gate Charge: 703nC
  • Minimum Operating Temperature: -55°C
  • Maximum Operating Temperature: 150°C

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