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IRFN9240

Part No IRFN9240
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
Sample
Rohs State rohs
ECAD Module
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Mounting SMD (SMT)
Termination SMD/SMT
Continuous Drain Current (ID) -7 A
Drain to Source Breakdown Voltage -200 V
Drain to Source Resistance 510 mΩ
Drain to Source Voltage (Vdss) 200 V
Gate to Source Voltage (Vgs) 20 V
Lead Free Contains Lead
Maximum Operating Temperature 150 °C
Min Operating Temperature -55 °C
Mount Surface Mount
Number of Elements 1
Number of Pins 3
On-State Resistance 500 mΩ
Power Dissipation 125 W
Radiation Hardening No
RoHS Compliant
Schedule B 8541290080
Win Source Part Number 1026635-IRFN9240
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Infineon Technologies
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian IRFN9240 CAD Model

Description

The IRFN9240 is a P-Channel Power MOSFET from Infineon Technologies, designed for high-voltage, high-current switching applications. This MOSFET is commonly used in audio amplifiers, power supplies, and motor control circuits. Its robust design and high voltage capability make it suitable for demanding environments.

Applications:

      
  • Audio Amplifiers: Used as a switching or amplifying element in audio amplifier circuits.
  •   
  • Power Supplies: Functions as a switch in power supply circuits for voltage regulation and power management.
  •   
  • Motor Control: Employed in motor control circuits for efficient switching and speed control.
  •   
  • Linear Amplifiers: Can be configured for linear amplification applications.

Features:

      
  • P-Channel MOSFET: A P-Channel MOSFET, offering design flexibility in various applications.
  •   
  • High Voltage Rating: High drain-source voltage (VDS) rating suitable for high-voltage applications.
  •   
  • High Current Capability: Supports high continuous drain current (ID) for demanding loads.
  •   
  • Fast Switching Speed: Designed for fast switching, reducing switching losses.
  •   
  • Robust Design: Rugged design for reliable performance in harsh environments.

Benefits:

      
  • Versatile Application: Suitable for a wide range of applications due to its high voltage and current capabilities.
  •   
  • Efficient Switching: Fast switching speed minimizes power losses, enhancing overall efficiency.
  •   
  • Reliable Performance: Robust design ensures reliable operation in demanding conditions.
  •   
  • Simplified Design: P-Channel configuration can simplify gate drive circuitry in certain applications.

Technical Specifications:

The IRFN9240 typically features a drain-source voltage (VDS) rating of -200V, a continuous drain current (ID) rating of around -11A, and a typical RDS(on) value. It is packaged in a TO-3 package. Consult the official Infineon datasheet for precise specifications and performance curves.

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