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Same model may have multiple batches, images only for reference.
IRF5Y5305CM
Same model may have multiple batches, images only for reference.

IRF5Y5305CM

Part No IRF5Y5305CM
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Continuous Drain Current (ID) -15 A
Drain to Source Breakdown Voltage -55 V
Drain to Source Resistance 65 mΩ
Drain to Source Voltage (Vdss) 55 V
Gate to Source Voltage (Vgs) 20 V
Lead Free Contains Lead
Max Operating Temperature 150 °C
Min Operating Temperature -55 °C
Mount Through Hole
Number of Elements 1
Number of Pins 3
On-State Resistance 100 mΩ
Power Dissipation 75 W
Radiation Hardening No
RoHS Compliant
Schedule B 8541290080
Win Source Part Number 1230095-IRF5Y5305CM
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Infineon Technologies
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF5Y5305CM CAD Model

Description

The Infineon Technologies IRF5Y5305CM is an N-channel MOSFET transistor with a drain-source voltage of 55V and a continuous drain current of -15A.

  • Drain-Source Voltage: 55V
  • Continuous Drain Current: -15A
  • On-State Resistance (Max): 100 mΩ
  • Drain-Source Resistance: 65 mΩ
  • Mounting Type: Through Hole
  • Dimension: 3 pins
  • Application: Transistors - FETs, MOSFETs - RF
  • Power Dissipation: 75 W

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