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Same model may have multiple batches, images only for reference.
IRF5NJ5305
Same model may have multiple batches, images only for reference.

IRF5NJ5305

Part No IRF5NJ5305
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Case / Package SMD/SMT
Continuous Drain Current (ID) -16 A
Drain to Source Breakdown Voltage -55 V
Drain to Source Resistance 65 mΩ
Drain to Source Voltage (Vdss) 55 V
Gate to Source Voltage (Vgs) 20 V
Lead Free Contains Lead
Max Operating Temperature 150 °C
Min Operating Temperature -55 °C
Mount Surface Mount
Number of Elements 1
Number of Pins 3
On-State Resistance 100 mΩ
Power Dissipation 75 W
Radiation Hardening No
RoHS Non-Compliant
Win Source Part Number 1227260-IRF5NJ5305
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Infineon Technologies
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF5NJ5305 CAD Model

Description

The IRF5NJ5305 is a power MOSFET transistor from Infineon Technologies. It has a drain to source voltage of 55V and a power dissipation of 75W. The device comes in a surface mount package and has three pins. It is not compliant with RoHS regulations and contains lead. The device has a minimum operating temperature of -55°C and a maximum operating temperature of 150°C.

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