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IRFP150NPBF

Part No IRFP150NPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 42A TO-247AC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Bulk
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 110nC @ 10V
Max Input Capacitance 1900pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 160W (Tc)
Maximum Rds On at Id,Vgs 36 mOhm @ 23A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-247AC
Dimension TO-247-3
Win Source Part Number 017625-IRFP150NPBF
Family Name IRFP150N
Introduction Date February 11, 2004
ECCN EAR99
Country of Origin China, Mexico
Halogen Free Compliant
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRFP150NPBF CAD Model

Description

The Infineon Technologies IRFP150NPBF is a MOSFET with N-channel polarity.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 42A @ Tc
  • Maximum Power Dissipation: 160W (Tc)
  • Package: TO-247AC package
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On at Id,Vgs: 36 mOhm @ 23A, 10V
  • Supply and Demand Status: sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
80+ $0.6519 $52.1520
190+ $0.5349 $101.6310
290+ $0.5182 $150.2780
400+ $0.5015 $200.6000
520+ $0.4848 $252.0960
695+ $0.4346 $302.0470
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 50,800 pieces
MOQ: 80 pcs
Order Increment : 1 pcs
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