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Same model may have multiple batches, images only for reference.
IRFR1205PBF Infineon Technologies
Same model may have multiple batches, images only for reference.

IRFR1205PBF

Part No IRFR1205PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 44A DPAK
Datasheet
IRFR1205PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 65nC @ 10V
Max Input Capacitance 1300pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 107W (Tc)
Maximum Rds On at Id,Vgs 27 mOhm @ 26A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 144216-IRFR1205PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFR1205PBF CAD Model

Description

The IRFR1205PBF is a N-Channel MOSFET manufactured by Infineon Technologies.

  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 44A @ 25°C
  • Power Dissipation: 107W (Tc)
  • Package: D-Pak
  • Dimensions: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Rds On at Id,Vgs: 27 mOhm @ 26A, 10V
  • Application: Discrete Semiconductor Products
  • Popularity: Medium

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