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Same model may have multiple batches, images only for reference.
IRFR13N20DCPBF Real Image
Same model may have multiple batches, images only for reference.

IRFR13N20DCPBF

Part No IRFR13N20DCPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 13A DPAK
Datasheet
IRFR13N20DCPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5.5V @ 250μA
Max Gate Charge 38nC @ 10V
Max Input Capacitance 830pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 110W (Tc)
Maximum Rds On at Id,Vgs 235 mOhm @ 8A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1047025-IRFR13N20DCPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFR13N20DCPBF CAD Model

Description

The Infineon Technologies IRFR13N20DCPBF is a MOSFET transistor with an N-Channel polarity.

  • Power Dissipation (Max): 110W (Tc)
  • Drain-Source Breakdown Voltage: 200V
  • Maximum Continuous Drain Current: 13A (Tc)
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On @ Id,Vgs: 235 mOhm @ 8A, 10V
  • Gate-Source Threshold Voltage: 5.5V @ 250μA
  • Maximum Gate Charge: 38nC @ 10V
  • Package: D-Pak case
  • Mounting: SMD (SMT) technology
  • Category: Discrete Semiconductor Product
  • Status: Obsolete (EOL)
  • Supply and Demand: Balanced

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