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Same model may have multiple batches, images only for reference.
IRFR3411PBF Infineon Technologies
Same model may have multiple batches, images only for reference.

IRFR3411PBF

Part No IRFR3411PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 32A DPAK
Datasheet
IRFR3411PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 71nC @ 10V
Max Input Capacitance 1960pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 130W (Tc)
Maximum Rds On at Id,Vgs 44 mOhm @ 16A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 040740-IRFR3411PBF
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Power Management, LED Lighting
Ultra Librarian 3D Model Ultra Librarian IRFR3411PBF CAD Model

Description

The Infineon Technologies 040740-IRFR3411PBF is a MOSFET technology-based electronic component.

  • Maximum power dissipation: 130W (Tc)
  • Continuous drain current: 32A (Tc) @ 25°C
  • Status: not for new designs
  • Supply and demand status: limited
  • Applications: power management and LED lighting
  • Case/Package: D-Pak
  • Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63

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180+ $0.6507 $117.1260
275+ $0.6304 $173.3600
380+ $0.6101 $231.8380
490+ $0.5897 $288.9530
660+ $0.5288 $349.0080
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