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Same model may have multiple batches, images only for reference.
IRFR3418PBF Real Image
Same model may have multiple batches, images only for reference.

IRFR3418PBF

Part No IRFR3418PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 70A DPAK
Datasheet
IRFR3418PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 80V
Continuous Drain Current at 25°C 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5.5V @ 250μA
Max Gate Charge 94nC @ 10V
Max Input Capacitance 3510pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.8W (Ta), 140W (Tc)
Maximum Rds On at Id,Vgs 14 mOhm @ 18A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1040049-IRFR3418PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFR3418PBF CAD Model

Description

The Infineon Technologies IRFR3418PBF is a MOSFET transistor that has an N-Channel polarity and can handle a power dissipation of up to 3.8W (Ta) and 140W (Tc).

  • Package: D-Pak
  • Dimensions: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Drain-Source Breakdown Voltage: 80V
  • Continuous Drain Current (25°C): 70A (Tc)
  • Gate-Source Threshold Voltage: 5.5V @ 250μA
  • Maximum Gate Charge: 94nC @ 10V
  • Maximum Input Capacitance: 3510pF @ 25V
  • Supply and Demand: Balanced

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