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Same model may have multiple batches, images only for reference.
IRFR3505PBF Real Image
Same model may have multiple batches, images only for reference.

IRFR3505PBF

Part No IRFR3505PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 30A DPAK
Datasheet
IRFR3505PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 93nC @ 10V
Max Input Capacitance 2030pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 140W (Tc)
Maximum Rds On at Id,Vgs 13 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 139636-IRFR3505PBF
Family Name IRFR3505
Introduction Date July 16, 2004
ECCN EAR99
Country of Origin Mexico
Halogen Free Compliant
Estimated EOL Date Obsolete
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFR3505PBF CAD Model

Description

The Infineon Technologies IRFR3505PBF is a N-Channel MOSFET manufactured by Infineon Technologies.

  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 30A @ 25°C
  • Power Dissipation: 140W (Tc)
  • Package: D-Pak
  • Dimensions: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Rds On @ Id,Vgs: 13 mOhm @ 30A, 10V
  • Ideal Use: Discrete Semiconductor Products
  • Market Popularity: High
  • Status: obsolete and has limited supply and demand status

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115+ $0.8741 $100.5215
180+ $0.8468 $152.4240
245+ $0.8195 $200.7775
320+ $0.7921 $253.4720
425+ $0.7102 $301.8350
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