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Same model may have multiple batches, images only for reference.
IRFR3518TRPBF Real Image
Same model may have multiple batches, images only for reference.

IRFR3518TRPBF

Part No IRFR3518TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 38A DPAK
Datasheet
IRFR3518TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 80V
Continuous Drain Current at 25°C 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 56nC @ 10V
Max Input Capacitance 1710pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 110W (Tc)
Maximum Rds On at Id,Vgs 29 mOhm @ 18A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1040050-IRFR3518TRPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFR3518TRPBF CAD Model

Description

The Infineon Technologies 1040050-IRFR3518TRPBF is a MOSFET (Metal Oxide) Polarity N-Channel component that is active and is supplied in the D-Pak package.

  • Drain-Source Breakdown Voltage: 80V
  • Continuous Drain Current @ 25°C: 38A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Max Gate Charge: 56nC @ 10V
  • Max Input Capacitance: 1710pF @ 25V
  • Maximum Rds On @ Id, Vgs: 29 mOhm @ 18A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.9215 $59.8975
155+ $0.7562 $117.2110
240+ $0.7325 $175.8000
330+ $0.7089 $233.9370
425+ $0.6853 $291.2525
565+ $0.6144 $347.1360
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,010 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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