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Same model may have multiple batches, images only for reference.
IRFR3704ZTRL Real Image
Same model may have multiple batches, images only for reference.

IRFR3704ZTRL

Part No IRFR3704ZTRL
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 60A DPAK
Datasheet
IRFR3704ZTRL Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.55V @ 250μA
Max Gate Charge 14nC @ 4.5V
Max Input Capacitance 1190pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 48W (Tc)
Maximum Rds On at Id,Vgs 8.4 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1040052-IRFR3704ZTRL
Popularity Medium
Supply and Demand Status Balance
Quantity per package 75
Ultra Librarian 3D Model Ultra Librarian IRFR3704ZTRL CAD Model

Description

The Infineon Technologies IRFR3704ZTRL is an N-channel MOSFET with a drain-source breakdown voltage of 20V and a continuous drain current of 60A @ 25°C.

  • Type: N-channel MOSFET
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 60A
  • Package: D-Pak
  • Maximum Power Dissipation: 48W
  • Gate-Source Threshold Voltage: 2.55V @ 250μA
  • Maximum Gate-Source Voltage: ±20V
  • Application: Discrete semiconductor products

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Pricing & Ordering

Quantity Unit Price Ext. Price
135+ $0.4377 $59.0895
325+ $0.3592 $116.7400
500+ $0.3477 $173.8500
690+ $0.3361 $231.9090
890+ $0.3257 $289.8730
1,190+ $0.2922 $347.7180
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Availability: 3,000 pieces
MOQ: 135 pcs
Order Increment : 1 pcs
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