IRFR3704ZTRL

Part No IRFR3704ZTRL
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 60A DPAK
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.55V @ 250μA
Max Gate Charge 14nC @ 4.5V
Max Input Capacitance 1190pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 48W (Tc)
Maximum Rds On at Id,Vgs 8.4 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1040052-IRFR3704ZTRL
Popularity Medium
Supply and Demand Status Balance
Quantity per package 75

Description

The Infineon Technologies IRFR3704ZTRL is an N-channel MOSFET with a drain-source breakdown voltage of 20V and a continuous drain current of 60A at 25°C. The MOSFET is packaged in D-Pak and has a maximum power dissipation of 48W. It has a gate-source threshold voltage of 2.55V at 250μA and a maximum gate-source voltage of ±20V. The MOSFET is ideal for use in discrete semiconductor products.

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Pricing & Ordering (USD)

Quantity Unit Price Ext. Price
135+ $0.3790 $51.1650
325+ $0.3110 $101.0750
500+ $0.3010 $150.5000
690+ $0.2910 $200.7900
890+ $0.2820 $250.9800
1,190+ $0.2530 $301.0700
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
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Availability: 3,000 pieces
MOQ: 135 pcs
Order Increment : 1 pcs
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