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Same model may have multiple batches, images only for reference.
IRFR3706CPBF Real Image
Same model may have multiple batches, images only for reference.

IRFR3706CPBF

Part No IRFR3706CPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 75A DPAK
Datasheet
IRFR3706CPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.8V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 35nC @ 4.5V
Max Input Capacitance 2410pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 88W (Tc)
Maximum Rds On at Id,Vgs 9 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1047047-IRFR3706CPBF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRFR3706CPBF CAD Model

Description

The Infineon Technologies 426501 is an N-channel MOSFET designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 88W (Tc)
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current at 25°C: 75A (Tc)
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Gate Charge: 35nC @ 4.5V
  • Maximum Input Capacitance: 2410pF @ 10V
  • Maximum Rds On at Id,Vgs: 9 mOhm @ 15A, 10V
  • Package: D-Pak case/package
  • Mounting: SMD (SMT) mounting
  • Status: Obsolete (EOL)
  • Popularity: Medium
  • Supply and Demand Status: Sufficient

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