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Same model may have multiple batches, images only for reference.
IRFR3711ZPBF Real Image
Same model may have multiple batches, images only for reference.

IRFR3711ZPBF

Part No IRFR3711ZPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 93A DPAK
Datasheet
IRFR3711ZPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 93A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.45V @ 250μA
Max Gate Charge 27nC @ 4.5V
Max Input Capacitance 2160pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 79W (Tc)
Maximum Rds On at Id,Vgs 5.7 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1047062-IRFR3711ZPBF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRFR3711ZPBF CAD Model

Description

The Infineon Technologies MOSFET is a N-Channel polarity power transistor that is suitable for use in a variety of applications.

  • Polarity: N-Channel
  • Maximum Power Dissipation: 79W (Tc)
  • Continuous Drain Current: 93A (Tc) @ 25°C
  • Drain-Source Breakdown Voltage: 20V
  • Gate-Source Threshold Voltage: 2.45V @ 250μA
  • Maximum Rds On: 5.7 mOhm @ 15A, 10V
  • Package: D-Pak
  • Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Status: Obsolete (EOL)
  • Popularity: Medium
  • Supply and Demand Status: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $29.3234 $58.6468
5+ $24.0602 $120.3010
7+ $23.3083 $163.1581
9+ $22.5564 $203.0076
12+ $21.8046 $261.6552
16+ $19.5489 $312.7824
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Availability: 3,390 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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