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Same model may have multiple batches, images only for reference.
IRFR3910CPBF Real Image
Same model may have multiple batches, images only for reference.

IRFR3910CPBF

Part No IRFR3910CPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 16A DPAK
Datasheet
IRFR3910CPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 44nC @ 10V
Max Input Capacitance 640pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 79W (Tc)
Maximum Rds On at Id,Vgs 115 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1047064-IRFR3910CPBF
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Power Management
Ultra Librarian 3D Model Ultra Librarian IRFR3910CPBF CAD Model

Description

The IRFR3910CPBF is an obsolete (EOL) N-channel MOSFET manufactured by Infineon Technologies.

  • Operating Temperature: -55°C to 175°C
  • Maximum Power Dissipation: 79W (Tc)
  • Package Type: D-Pak
  • Mounting: SMD technology
  • Maximum Drain-Source Breakdown Voltage: 100V
  • Maximum Continuous Drain Current @ 25°C: 16A (Tc)
  • Maximum Rds On @ Id, Vgs: 115 mOhm @ 10A, 10V
  • Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 44nC @ 10V
  • Maximum Input Capacitance: 640pF @ 25V
  • Usage: Discrete semiconductor products and specifically suitable for power management applications.

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