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Same model may have multiple batches, images only for reference.
IRFR3911TRLPBF Real Image
Same model may have multiple batches, images only for reference.

IRFR3911TRLPBF

Part No IRFR3911TRLPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 14A DPAK
Datasheet
IRFR3911TRLPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 32nC @ 10V
Max Input Capacitance 740pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 56W (Tc)
Maximum Rds On at Id,Vgs 115 mOhm @ 8.4A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1040055-IRFR3911TRLPBF
Popularity Medium
Supply and Demand Status Balance
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian IRFR3911TRLPBF CAD Model

Description

The Infineon Technologies IRFR3911TRLPBF is a N-Channel MOSFET that is designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current (25°C): 14A (Tc)
  • Maximum Rds On (Id,Vgs): 115 mOhm @ 8.4A, 10V
  • Package: D-Pak
  • Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 32nC @ 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Input Capacitance: 740pF @ 25V
  • Status: Obsolete (EOL)
  • Popularity: Medium
  • Supply and Demand: Balanced
  • Quantity per Package: 3k pcs

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