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IRFR4104PBF

Part No IRFR4104PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 42A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 89nC @ 10V
Max Input Capacitance 2950pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 140W (Tc)
Maximum Rds On at Id,Vgs 5.5 mOhm @ 42A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 101707-IRFR4104PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFR4104PBF CAD Model

Description

The Infineon Technologies IRFR4104PBF is a N-channel MOSFET transistor with a drain-source breakdown voltage of 40V and a continuous drain current of 42A @ 25°C.

  • Maximum Power Dissipation: 140W (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Package: D-Pak case
  • Dimensions: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Recommendation: Not recommended for new designs
  • Temperature Range: -55°C to 175°C (TJ)
  • Maximum Rds On: 5.5 mOhm @ 42A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Supply and Demand Status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.8703 $52.2180
145+ $0.7141 $103.5445
220+ $0.6918 $152.1960
300+ $0.6695 $200.8500
390+ $0.6471 $252.3690
520+ $0.5802 $301.7040
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,670 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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