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Same model may have multiple batches, images only for reference.
IRFR4105ZPBF Real Image
Same model may have multiple batches, images only for reference.

IRFR4105ZPBF

Part No IRFR4105ZPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 30A DPAK
Datasheet
IRFR4105ZPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 27nC @ 10V
Max Input Capacitance 740pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 48W (Tc)
Maximum Rds On at Id,Vgs 24.5 mOhm @ 18A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 040744-IRFR4105ZPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFR4105ZPBF CAD Model

Description

The Infineon Technologies IRFR4105ZPBF is an N-channel MOSFET that is not for new designs.

  • Maximum Power Dissipation: 48W (Tc)
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 30A (Tc) @ 25°C
  • Maximum Rds On: 24.5 mOhm @ 18A, 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate-Source Voltage: ±20V
  • Package: D-Pak package
  • Mounting Technology: SMD (SMT)
  • Market Popularity: medium
  • Supply and Demand Status: limited

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Quantity Unit Price Ext. Price
6+ $8.7314 $52.3884
14+ $7.1642 $100.2988
22+ $6.9403 $152.6866
30+ $6.7165 $201.4950
39+ $6.4926 $253.2114
52+ $5.8209 $302.6868
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Availability: 1,910 pieces
MOQ: 6 pcs
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