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Same model may have multiple batches, images only for reference.
IRFR5410TRRPBF Real Image
Same model may have multiple batches, images only for reference.

IRFR5410TRRPBF

Part No IRFR5410TRRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 100V 13A DPAK
Datasheet
IRFR5410TRRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Not For New Designs
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 58nC @ 10V
Max Input Capacitance 760pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 66W (Tc)
Maximum Rds On at Id,Vgs 205 mOhm @ 7.8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 205392-IRFR5410TRRPBF
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Automotive, Power Management
Ultra Librarian 3D Model Ultra Librarian IRFR5410TRRPBF CAD Model

Description

The Infineon Technologies IRFR5410TRRPBF is a P-channel MOSFET transistor in a D-Pak package.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 13A @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On at Id, Vgs: 205 mOhm @ 7.8A and 10V
  • Power Dissipation: 66W (Tc)
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Recommended for New Designs: No
  • Packaging: Reel-tray

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Pricing & Ordering

Quantity Unit Price Ext. Price
165+ $0.3042 $50.1930
355+ $0.2849 $101.1395
545+ $0.2753 $150.0385
785+ $0.2560 $200.9600
1,015+ $0.2464 $250.0960
1,270+ $0.2368 $300.7360
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Availability: 52,660 pieces
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