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IRFR7540TRPBF Infineon Technologies IRFR7540TRPBF Real Image1 IRFR7540TRPBF Real Image2 IRFR7540TRPBF real image10313 IRFR7540TRPBF label picture 2
Same model may have multiple batches, images only for reference.
IRFR7540TRPBF Infineon Technologies IRFR7540TRPBF Real Image1 IRFR7540TRPBF Real Image2 IRFR7540TRPBF real image10313 IRFR7540TRPBF label picture 2
IRFR7540TRPBF Infineon Technologies IRFR7540TRPBF Real Image1 IRFR7540TRPBF Real Image2 IRFR7540TRPBF real image10313 IRFR7540TRPBF label picture 2
Same model may have multiple batches, images only for reference.

IRFR7540TRPBF

Part No IRFR7540TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH Si 60V 110A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 60V 90A DPAK
Datasheet
IRFR7540TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 3.7V @ 100μA
Max Gate Charge 130nC @ 10V
Max Input Capacitance 4360pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 140W (Tc)
Maximum Rds On at Id,Vgs 4.8 mOhm @ 66A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-PAK (TO-252AA)
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1047087-IRFR7540TRPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name IRFR7540PbF
Introduction Date March 12, 2014
ECCN EAR99
Country of Origin Mexico
Halogen Free Compliant
Estimated EOL Date 2030
Ultra Librarian 3D Model Ultra Librarian IRFR7540TRPBF CAD Model

Description

The Infineon Technologies IRFR7540TRPBF is an N-Channel MOSFET that features a drain-source breakdown voltage of 60V, a continuous drain current of 90A @ 25°C, and a maximum power dissipation of 140W.

  • Package: D-PAK (TO-252AA)
  • Gate-Source Threshold Voltage: 3.7V @ 100μA
  • Maximum Rds On: 4.8 mOhm @ 66A and 10V
  • Part of: IRFR7540PbF family
  • Category: Discrete Semiconductor Products
  • Status: widely used due to its popularity and high demand
  • Compliance: Halogen Free regulations
  • Manufactured in: Mexico
  • Supply and Demand Status: limited

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