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Same model may have multiple batches, images only for reference.
IRFR7740TRPBF Real Image
Same model may have multiple batches, images only for reference.

IRFR7740TRPBF

Part No IRFR7740TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 87A D2PAK
Datasheet
IRFR7740TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 87A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 3.7V @ 100μA
Max Gate Charge 126nC @ 10V
Max Input Capacitance 4430pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 140W (Tc)
Maximum Rds On at Id,Vgs 7.2 mOhm @ 52A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-PAK (TO-252AA)
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1047091-IRFR7740TRPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFR7740TRPBF CAD Model

Description

The Infineon Technologies 1047091-IRFR7740TRPBF is an N-Channel MOSFET designed for discrete semiconductor products.

  • Power Dissipation: 140W (Tc)
  • Drain-Source Breakdown Voltage: 75V
  • Continuous Drain Current: 87A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 3.7V @ 100μA
  • Maximum Gate Charge: 126nC @ 10V
  • Maximum Rds On: 7.2 mOhm @ 52A, 10V
  • Mounting Technology: SMD (SMT)
  • Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63

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