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IRFS17N20DTRL

Part No IRFS17N20DTRL
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 16A D2PAK
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5.5V @ 250μA
Max Gate Charge 50nC @ 10V
Max Input Capacitance 1100pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 3.8W (Ta), 140W (Tc)
Maximum Rds On at Id,Vgs 170 mOhm @ 9.8A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1047113-IRFS17N20DTRL
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFS17N20DTRL CAD Model

Description

The Infineon Technologies 1047113-IRFS17N20DTRL is a MOSFET transistor.

  • Polarity: N-Channel
  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 16A @ 25°C
  • Maximum Rds on @ Id, Vgs: 170 mOhm @ 9.8A, 10V
  • Maximum Gate-Source Voltage: ±30V
  • Gate-Source Threshold Voltage: 5.5V @ 250μA
  • Maximum Gate Charge: 50nC @ 10V
  • Maximum Input Capacitance: 1100pF @ 25V
  • Power Dissipation: 3.8W (Ta), 140W (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Package: D2PAK case with TO-263-3, D2Pak (2 Leads + Tab), TO-263AB dimension
  • Ideal Use: Discrete semiconductor products

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.9794 $58.7640
145+ $0.8039 $116.5655
225+ $0.7785 $175.1625
310+ $0.7542 $233.8020
400+ $0.7288 $291.5200
535+ $0.6537 $349.7295
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,800 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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