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IRFS3107PBF Infineon Technologies IRFS3107PBF Real Image
Same model may have multiple batches, images only for reference.
IRFS3107PBF Infineon Technologies IRFS3107PBF Real Image
IRFS3107PBF Infineon Technologies IRFS3107PBF Real Image
Same model may have multiple batches, images only for reference.

IRFS3107PBF

Part No IRFS3107PBF
Manufacturer Infineon Technologies
Catalog FETs - Single
Description HEXFET Power MOSFET | MOSFET N-CH 75V 195A D2PAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 75V
Id - Continuous Drain Current 195A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 3mOhm at 140A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 240nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 9370pF at 50V
Power Dissipation (Maximum) 370W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package D2PAK
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Win Source Part Number 1187996-IRFS3107PBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFS3107PBF CAD Model

Description

The Infineon Technologies MOSFET is a high-performance N-channel transistor with a Vds - Drain-Source Breakdown Voltage of 75V and a continuous drain current of 195A.

  • Manufacturer: Infineon Technologies
  • Type: N-channel transistor
  • Vds - Drain-Source Breakdown Voltage: 75V
  • Continuous Drain Current: 195A
  • Rds On (Maximum) @ 140A and 10V: 3mOhm
  • Gate Source Voltage(th) @ 250μA: 4V
  • Gate Charge (Qg) @ 10V: 240nC
  • Input Capacitance (Ciss) @ 50V: 9370pF
  • Package: D2PAK (2 Leads + Tab)
  • Power Dissipation: 370W
  • Operating Temperature: -55°C to 175°C
  • Application: discrete semiconductor products

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