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IRFS31N20DTRL

Part No IRFS31N20DTRL
Manufacturer Infineon Technologies
Catalog FETs - Single
Description MOSFET N-CH 200V 31A D2PAK
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tape and Reel
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 200V
Id - Continuous Drain Current 31A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 82mOhm at 18A, 10V
Gate Source Voltage(th) (Maximum) at Id 5.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 110nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 2370pF at 25V
Power Dissipation (Maximum) 3.1W, 200W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package D2PAK
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 800
MSL Level 1 (Unlimited)
Win Source Part Number 718721-IRFS31N20DTRL
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFS31N20DTRL CAD Model

Description

The Infineon Technologies IRFS31N20DTRL is an N-channel MOSFET with a drain-source breakdown voltage of 200V and a continuous drain current of 31A.

  • Application: Designed for high-performance switching applications, such as power supplies, motor control, and lighting control
  • Features: Low on-state resistance, fast switching speed, and high current capability
  • Package: Available in D2PAK package
  • Compliance: RoHS compliant

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Pricing & Ordering

Quantity Unit Price Ext. Price
14+ $4.1914 $58.6796
34+ $3.4391 $116.9294
53+ $3.3317 $176.5801
72+ $3.2242 $232.1424
93+ $3.1168 $289.8624
125+ $2.7943 $349.2875
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 39,810 pieces
MOQ: 14 pcs
Order Increment : 1 pcs
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