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Same model may have multiple batches, images only for reference.
IRFS31N20DTRR Real Image
Same model may have multiple batches, images only for reference.

IRFS31N20DTRR

Part No IRFS31N20DTRR
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 31A D2PAK
Datasheet
IRFS31N20DTRR Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5.5V @ 250μA
Max Gate Charge 110nC @ 10V
Max Input Capacitance 2370pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 3.1W (Ta), 200W (Tc)
Maximum Rds On at Id,Vgs 82 mOhm @ 18A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 124883-IRFS31N20DTRR
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFS31N20DTRR CAD Model

Description

The Infineon Technologies 124883-IRFS31N20DTRR is an N-channel MOSFET with a drain-source breakdown voltage of 200V and continuous drain current of 31A (Tc) at 25°C.

  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 31A (Tc) @ 25°C
  • Power Dissipation: 3.1W (Ta), 200W (Tc)
  • Maximum Rds on at Id,Vgs: 82 mOhm @ 18A, 10V
  • Gate-Source Threshold Voltage: 5.5V @ 250μA
  • Maximum Gate Charge: 110nC @ 10V

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93+ $3.1168 $289.8624
125+ $2.7943 $349.2875
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