The JANTX2N6796U is a radiation-hardened N-channel MOSFET manufactured by Microsemi Corporation. This device is specifically designed for use in space and high-reliability applications where exposure to radiation is a concern. It is characterized by its robust performance and ability to withstand harsh environments.

Applications:

• Spacecraft electronics
• Satellite systems
• High-altitude aircraft
• Nuclear power plants
• Military applications

Features:

• Radiation-hardened
• N-channel MOSFET
• High drain-source voltage
• Low on-resistance
• Fast switching speed
• Hermetically sealed package

Benefits:

• Reliable operation in radiation environments
• Efficient power switching
• Reduced power dissipation
• Fast response times
• High reliability and long lifetime

Technical Specifications:

Detailed technical specifications, including drain-source voltage, gate-source voltage, drain current, on-resistance, and total gate charge, are available in the official Microsemi datasheet for the JANTX2N6796U. Consult the datasheet for specific values and derating curves.