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Same model may have multiple batches, images only for reference.
IRFS3607PBF Real Image
Same model may have multiple batches, images only for reference.

IRFS3607PBF

Part No IRFS3607PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 80A D2PAK
Datasheet
IRFS3607PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 100μA
Max Gate Charge 84nC @ 10V
Max Input Capacitance 3070pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 140W (Tc)
Maximum Rds On at Id,Vgs 9 mOhm @ 46A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1047131-IRFS3607PBF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRFS3607PBF CAD Model

Description

The Infineon Technologies IRFS3607PBF is an N-Channel MOSFET with a drain-source breakdown voltage of 75V and a continuous drain current of 80A at 25°C.

  • Drain-Source Breakdown Voltage: 75V
  • Continuous Drain Current (25°C): 80A
  • Power Dissipation (Tc): 140W
  • Maximum Rds On: 9 mOhm @ 46A, 10V
  • Gate-Source Threshold Voltage: 4V @ 100μA
  • Maximum Gate Charge: 84nC @ 10V
  • Maximum Input Capacitance: 3070pF @ 50V
  • Mounting: SMD (SMT)
  • Package: D2PAK
  • Status: Not for new designs
  • Suitable for: Discrete semiconductor products

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235+ $0.4341 $102.0135
360+ $0.4205 $151.3800
495+ $0.4070 $201.4650
640+ $0.3934 $251.7760
855+ $0.3527 $301.5585
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