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Same model may have multiple batches, images only for reference.
IRFS4010-7PPBF Real Image
Same model may have multiple batches, images only for reference.

IRFS4010-7PPBF

Part No IRFS4010-7PPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 100V 190A 7-Pin(6+Tab) D2PAK Tube / MOSFET N-CH 100V 190A D2PAK-7
Datasheet
IRFS4010-7PPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 190A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 230nC @ 10V
Max Input Capacitance 9830pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 380W (Tc)
Maximum Rds On at Id,Vgs 4 mOhm @ 110A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Win Source Part Number 040752-IRFS4010-7PPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name IRFS4010-7P
Introduction Date October 07, 2008
ECCN EAR99
Country of Origin Mexico
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian IRFS4010-7PPBF CAD Model

Description

The Infineon Technologies 040752-IRFS4010-7PPBF is a MOSFET technology-based electronic component that has a power dissipation of 380W (Tc).

  • Package/Case: D2PAK
  • Mounting: SMD (SMT)
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 190A (Tc)
  • Max Gate Charge: 230nC @ 10V
  • Max Input Capacitance: 9830pF @ 50V
  • Reliability: reliable and efficient component
  • Application: discrete semiconductor applications

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