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IRFS4229TRLPBF

Part No IRFS4229TRLPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 250V 45A D2PAK
Datasheet
IRFS4229TRLPBF Datasheet
Sample
Rohs State Need to verify
ECAD Module ECAD

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Pricing & Ordering $2.9242 Historical reference price : is the price that a customer announces that it is willing to pay for this component in the previous period, only for reference.
Quantity
Unit Price
Ext. Price
13+
$4.0020
$52.026
31+
$3.2840
$101.804
48+
$3.1810
$152.688
65+
$3.0790
$200.135
85+
$2.9760
$252.960
113+
$2.6680
$301.484
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
Availability: 18,250 pieces
MOQ: 13 pcs
Order Increment : 1 pcs
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Products specifications

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 250V
Continuous Drain Current at 25°C 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 110nC @ 10V
Max Input Capacitance 4560pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 330W (Tc)
Maximum Rds On at Id,Vgs 48 mOhm @ 26A, 10V
Temperature Range - Operating -40°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 017712-IRFS4229TRLPBF
Family Name IRFS4229
Introduction Date May 04, 2004
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Fake Threat In the Open Market 66 pct.
Supply and Demand Status Balance
Alternative Parts
(Cross-Reference) 		SUM45N25-58;  SUM45N25-58-E3;  RCJ510N25TL; 

Description

The Infineon Technologies IRFS4229TRLPBF is an N-channel MOSFET that comes in a D2PAK (TO-263AB) package. It has a drain-source breakdown voltage of 250V and a continuous drain current of 45A (Tc) at 25°C. The MOSFET has a maximum Rds On of 48 mOhm @ 26A, 10V and a maximum gate charge of 110nC @ 10V. The gate-source threshold voltage is 5V @ 250μA and the maximum input capacitance is 4560pF @ 25V. The MOSFET has a power dissipation of 330W (Tc) and can operate in a temperature range of -40°C to 175°C (TJ). It is a common-used part with a high popularity and a fake threat of 66 pct. in the open market. The supply and demand status is balanced and the estimated EOL date is 2024.

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