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IRFS4410ZPBF

Part No IRFS4410ZPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 97A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 97A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 150μA
Max Gate Charge 120nC @ 10V
Max Input Capacitance 4820pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 230W (Tc)
Maximum Rds On at Id,Vgs 9 mOhm @ 58A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 069588-IRFS4410ZPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFS4410ZPBF CAD Model

Description

The Infineon Technologies IRFS4410ZPBF is an N-Channel MOSFET that comes in a D2PAK package.

  • Drain-Source Breakdown Voltage: 100V
  • Maximum Power Dissipation: 230W (Tc)
  • Maximum Rds On at Id, Vgs: 9 mOhm @ 58A, 10V
  • Status: not for new designs and has a balance supply and demand status.
  • Package: comes in a tube/rail with 50 pcs per package.

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.8671 $52.0260
125+ $0.8112 $101.4000
195+ $0.7832 $152.7240
275+ $0.7273 $200.0075
360+ $0.6993 $251.7480
450+ $0.6714 $302.1300
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 19,170 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
*Need More Quantity? *Request a Bulk Quantity Quotation?

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