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Same model may have multiple batches, images only for reference.
IRFS4510PBF Real Image
Same model may have multiple batches, images only for reference.

IRFS4510PBF

Part No IRFS4510PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 61A D2PAK
Datasheet
IRFS4510PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 61A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 100μA
Max Gate Charge 87nC @ 10V
Max Input Capacitance 3180pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 140W (Tc)
Maximum Rds On at Id,Vgs 13.9 mOhm @ 37A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1047144-IRFS4510PBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFS4510PBF CAD Model

Description

The Infineon Technologies IRFS4510PBF is a N-Channel MOSFET designed for use in various electronic circuits.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 61A @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 100μA
  • Maximum Gate Charge: 87nC @ 10V
  • Maximum Input Capacitance: 3180pF @ 50V
  • Maximum Rds On @ Id, Vgs: 13.9 mOhm @ 37A, 10V
  • Case: D2PAK
  • Mounting: SMD (SMT)
  • Applications: Power Supplies and Motor Control Circuits

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