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Same model may have multiple batches, images only for reference.
IRFS7430-7P real image377
Same model may have multiple batches, images only for reference.

IRFS7430-7P

Part No IRFS7430-7P
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 240A D2PAK
Datasheet
IRFS7430-7P Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 240A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 3.9V @ 250μA
Max Gate Charge 460nC @ 10V
Max Input Capacitance 13975pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 375W (Tc)
Maximum Rds On at Id,Vgs 0.75 mOhm @ 100A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (7-Lead)
Dimension TO-263-7, D2Pak (6 Leads + Tab)
Win Source Part Number 205400-IRFS7430-7P
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFS7430-7P CAD Model

Description

The Infineon Technologies IRFS7430-7P is an N-channel MOSFET that has a maximum power dissipation of 375W.

  • Maximum Power Dissipation: 375W
  • Supply and Demand Status: Limited
  • Popularity: Medium
  • Temperature Range: -55°C to 175°C (TJ)
  • Drain-Source Breakdown Voltage: 40V
  • Package: D2PAK (7-Lead)
  • Dimension: TO-263-7, D2Pak (6 Leads + Tab)

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27+ $6.4865 $175.1355
37+ $6.2774 $232.2638
48+ $6.0684 $291.2832
64+ $5.4412 $348.2368
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