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IRFSL4020PBF

Part No IRFSL4020PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 18A TO262
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.9V @ 100μA
Max Gate Charge 29nC @ 10V
Max Input Capacitance 1200pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 100W (Tc)
Maximum Rds On at Id,Vgs 105 mOhm @ 11A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-262
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 1047187-IRFSL4020PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFSL4020PBF CAD Model

Description

This component's supply and demand status is balance. It is an N-Channel MOSFET.

  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current @ 25°C: 18A (Tc)
  • Maximum Rds On @ Id,Vgs: 105 mOhm @ 11A, 10V
  • Package: TO-262
  • Mounting Type: Through Hole
  • Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Max Gate Charge: 29nC @ 10V
  • Max Input Capacitance: 1200pF @ 50V

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Shipped from HK warehouse
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