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IRFSL4229PBF

Part No IRFSL4229PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 250V 45A TO-262
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 250V
Continuous Drain Current at 25°C 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 110nC @ 10V
Max Input Capacitance 4560pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 330W (Tc)
Maximum Rds On at Id,Vgs 48 mOhm @ 26A, 10V
Temperature Range - Operating -40°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-262
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 040758-IRFSL4229PBF
Popularity Medium
Supply and Demand Status Balance
Quantity per package 50
Ultra Librarian 3D Model Ultra Librarian IRFSL4229PBF CAD Model

Description

It has a balanced supply and demand status and comes in a package of 50.

  • Supply and Demand Status: Balanced
  • Package Quantity: 50
  • Status: Obsolete (EOL)
  • Temperature Range: -40°C to 175°C (TJ)
  • Maximum Power Dissipation: 330W (Tc)
  • Continuous Drain Current: 45A (Tc)
  • Drain-Source Breakdown Voltage: 250V
  • Maximum Rds On @ Id,Vgs: 48 mOhm @ 26A, 10V

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