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IRFSL4615PBF

Name: IRFSL4615PBF
Brand: Infineon Technologies
SKU: 160977
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	IRFSL4615PBF
Manufacturer	Infineon Technologies
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 150V 33A TO-262
Datasheet	IRFSL4615PBF Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Packaging	Tube/Rail
Status	Obsolete(EOL)
Polarity	N-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	150V
Continuous Drain Current at 25°C	33A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Gate-Source Threshold Voltage	5V @ 100μA
Max Gate Charge	40nC @ 10V
Max Input Capacitance	1750pF @ 50V
Maximum Gate-Source Voltage	±20V
Power Dissipation (Max)	144W (Tc)
Maximum Rds On at Id,Vgs	42 mOhm @ 21A, 10V
Temperature Range - Operating	-55°C to 175°C (TJ)
Mounting	Through Hole
Case / Package	TO-262
Dimension	TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number	040759-IRFSL4615PBF
Popularity	Medium
Supply and Demand Status	Balance
Ultra Librarian 3D Model	Ultra Librarian IRFSL4615PBF CAD Model

Alternative Products

Description

The Infineon Technologies IRFSL4615PBF is an N-channel MOSFET transistor designed for use in discrete semiconductor products.

Maximum Power Dissipation: 144W
Continuous Drain Current: 33A @ 25°C
Drain-Source Breakdown Voltage: 150V
Gate-Source Threshold Voltage: 5V @ 100μA
Package: TO-262
Temperature Range: -55°C to 175°C
Status: Obsolete

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