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Same model may have multiple batches, images only for reference.
IRFU024N Infineon Technologies
Same model may have multiple batches, images only for reference.

IRFU024N

Part No IRFU024N
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 17A I-PAK
Datasheet
IRFU024N Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 20nC @ 10V
Max Input Capacitance 370pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 45W (Tc)
Maximum Rds On at Id,Vgs 75 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package IPAK (TO-251)
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 205404-IRFU024N
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFU024N CAD Model

Description

The Infineon Technologies 205404-IRFU024N is a N-Channel MOSFET with a drain-source breakdown voltage of 55V and continuous drain current of 17A at 25°C.

  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 17A @ 25°C
  • Mounting: Through-hole
  • Maximum Power Dissipation: 45W
  • Maximum Rds On: 75 mOhm @ 10A, 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Input Capacitance: 370pF @ 25V
  • Temperature Range: -55°C to 175°C (TJ)
  • Package: IPAK (TO-251)

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.8797 $52.7820
140+ $0.7219 $101.0660
215+ $0.6993 $150.3495
300+ $0.6767 $203.0100
385+ $0.6542 $251.8670
515+ $0.5865 $302.0475
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