The BUK7Y98-80E,115 is a high-performance, N-channel TrenchMOS™ standard level field-effect transistor (FET) designed and manufactured by NXP Semiconductors. This power MOSFET is part of NXP's extensive portfolio of semiconductor solutions that are engineered to deliver exceptional performance, efficiency, and reliability for a wide range of applications.

Key Features

• Device Type: Power MOSFET
• Channel Type: N-Channel
• Drain-Source Voltage (V_DS): 80V
• Continuous Drain Current (I_D): 98A
• Power Dissipation (P_D): 110W
• R_DS(on): Very low on-state resistance
• Package: LFPAK56, also known as Power-SO8
• Quality Level: Standard Industrial

Applications

The BUK7Y98-80E,115 is suitable for a variety of applications, particularly where high efficiency and power density are required. Its typical applications include, but are not limited to:

• DC/DC converters
• Motor drives
• Automotive systems
• Power management circuits
• Switch mode power supplies (SMPS)

Performance Benefits

This MOSFET is designed to provide excellent thermal performance and low conduction losses, making it an ideal choice for high-efficiency power systems. The low on-state resistance minimizes losses during conduction, while the robust package design ensures reliable operation under a wide range of conditions.

Environmental and Quality Standards

The BUK7Y98-80E,115 is compliant with various environmental and quality standards, ensuring its suitability for use in industrial environments. It is designed to meet the requirements of the RoHS directive, and its manufacturing processes are geared towards minimizing environmental impact.

Ordering and Packaging

Each unit of the BUK7Y98-80E,115 comes in the LFPAK56 package and is supplied in tape and reel packaging for efficient handling and assembly during the manufacturing process. For ordering, the complete part number BUK7Y98-80E,115 should be used to ensure receipt of the correct product specification.