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IRFU1010ZPBF

Part No IRFU1010ZPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 42A I-PAK
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 100μA
Max Gate Charge 95nC @ 10V
Max Input Capacitance 2840pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 140W (Tc)
Maximum Rds On at Id,Vgs 7.5 mOhm @ 42A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package IPAK (TO-251)
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 040761-IRFU1010ZPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFU1010ZPBF CAD Model

Description

The Infineon Technologies 040761-IRFU1010ZPBF is an obsolete (EOL) N-channel MOSFET designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 42A
  • Power Dissipation: Up to 140W (Tc)
  • Gate-Source Threshold Voltage: 4V @ 100μA
  • Maximum Gate Charge: 95nC @ 10V
  • Maximum Input Capacitance: 2840pF @ 25V
  • Maximum Rds On: 7.5 mOhm @ 42A, 10V
  • Package: IPAK (TO-251)
  • Mounting: Through-hole
  • Status: Obsolete (EOL)

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