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Same model may have multiple batches, images only for reference.
IRFU18N15D Real Image
Same model may have multiple batches, images only for reference.

IRFU18N15D

Part No IRFU18N15D
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 18A I-PAK
Datasheet
IRFU18N15D Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5.5V @ 250μA
Max Gate Charge 43nC @ 10V
Max Input Capacitance 900pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 110W (Tc)
Maximum Rds On at Id,Vgs 125 mOhm @ 11A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package IPAK (TO-251)
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1040375-IRFU18N15D
Popularity Medium
Supply and Demand Status Balance
Quantity per package 75
Ultra Librarian 3D Model Ultra Librarian IRFU18N15D CAD Model

Description

The Infineon Technologies IRFU18N15D is a MOSFET electronic component with N-Channel polarity.

  • Drain-Source Breakdown Voltage: 150V
  • Maximum Power Dissipation: 110W (Tc)
  • Maximum Continuous Drain Current (25°C): 18A (Tc)
  • Gate-Source Threshold Voltage: 5.5V @ 250μA
  • Maximum Gate Charge: 43nC @ 10V
  • Maximum Input Capacitance: 900pF @ 25V
  • Maximum Rds On (Id,Vgs): 125 mOhm @ 11A, 10V
  • Packaging: Tube/Rail
  • Mounting: Through Hole
  • Package: IPAK (TO-251)
  • Dimensions: TO-251-3 Short Leads, IPak, TO-251AA
  • Status: Obsolete (EOL)
  • Temperature Range: -55°C to 175°C (TJ)

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48+ $6.0499 $290.3952
64+ $5.4239 $347.1296
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