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IRFU2905Z

Part No IRFU2905Z
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 42A I-PAK
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 44nC @ 10V
Max Input Capacitance 1380pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 110W (Tc)
Maximum Rds On at Id,Vgs 14.5 mOhm @ 36A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package IPAK (TO-251)
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1040381-IRFU2905Z
Popularity Medium
Supply and Demand Status Balance
Quantity per package 75
Ultra Librarian 3D Model Ultra Librarian IRFU2905Z CAD Model

Description

The Infineon Technologies IRFU2905Z is a MOSFET transistor that has an N-Channel polarity and can handle a power dissipation of up to 110W (Tc).

  • Package: IPAK (TO-251)
  • Dimensions: TO-251-3 Short Leads, IPak, TO-251AA
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 42A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 44nC @ 10V
  • Maximum Input Capacitance: 1380pF @ 25V
  • Supply and Demand Status: Balanced
  • Quantity per Package: 75

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