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Same model may have multiple batches, images only for reference.
IRFU3504PBF Real Image
Same model may have multiple batches, images only for reference.

IRFU3504PBF

Part No IRFU3504PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 30A I-PAK
Datasheet
IRFU3504PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 71nC @ 10V
Max Input Capacitance 2150pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 140W (Tc)
Maximum Rds On at Id,Vgs 9.2 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package IPAK (TO-251)
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1047208-IRFU3504PBF
Popularity Medium
Supply and Demand Status Balance
Quantity per package 75
Ultra Librarian 3D Model Ultra Librarian IRFU3504PBF CAD Model

Description

The Infineon Technologies 1047208-IRFU3504PBF is an N-channel MOSFET transistor designed for use in various applications including power supplies, inverters, and motor drives.

  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 30A (Tc)
  • Maximum Rds On: 9.2 mOhm @ 30A, 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 71nC @ 10V
  • Maximum Input Capacitance: 2150pF @ 25V
  • Package: IPAK (TO-251) case/package
  • Status: Obsolete (EOL)
  • Supply and Demand: Balance

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