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Same model may have multiple batches, images only for reference.
IRFU3707 Real Image
Same model may have multiple batches, images only for reference.

IRFU3707

Part No IRFU3707
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 61A I-PAK
Datasheet
IRFU3707 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 61A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 19nC @ 4.5V
Max Input Capacitance 1990pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 87W (Tc)
Maximum Rds On at Id,Vgs 13 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package IPAK (TO-251)
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1040383-IRFU3707
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFU3707 CAD Model

Description

The Infineon Technologies IRFU3707 MOSFET is an N-channel power MOSFET designed for use in discrete semiconductor products.

  • Power Dissipation: 87W
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 61A @ 25°C
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 19nC @ 4.5V
  • Maximum Input Capacitance: 1990pF @ 15V
  • Maximum Rds On: 13 mOhm @ 15A, 10V
  • Package: IPAK (TO-251)
  • Mounting Type: Through-Hole
  • Product Status: Obsolete (EOL)

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