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Same model may have multiple batches, images only for reference.
IRFU3708PBF Real Image
Same model may have multiple batches, images only for reference.

IRFU3708PBF

Part No IRFU3708PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 61A I-PAK
Datasheet
IRFU3708PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 61A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.8V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 24nC @ 4.5V
Max Input Capacitance 2417pF @ 15V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 87W (Tc)
Maximum Rds On at Id,Vgs 12.5 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package IPAK (TO-251)
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1047216-IRFU3708PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFU3708PBF CAD Model

Description

The Infineon IRFU3708PBF is an N-channel MOSFET component that is part of the Discrete Semiconductor Products category.

  • Package: IPAK (TO-251)
  • Mounting: Through hole
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 61A
  • Maximum Power Dissipation: 87W
  • Common Uses: Switching and power supply applications
  • Characteristics: Low gate charge and a low Rds(on) value
  • Manufacturer: Infineon Technologies
  • Status: Obsolete (EOL)

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Quantity Unit Price Ext. Price
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23+ $5.2483 $120.7109
35+ $5.0843 $177.9505
47+ $4.9203 $231.2541
61+ $4.7563 $290.1343
82+ $4.2643 $349.6726
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Availability: 20,000 pieces
MOQ: 10 pcs
Order Increment : 1 pcs
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